savantic semiconductor product specification silicon pnp power transistors 2SA670 d escription with to-220 package low collector saturation voltage applications inverters;converters power amplification switching regulator ,driver pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -50 v v ceo collector- emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -3 a p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA670 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ,i b =0 -50 v v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -50 v v (br)ebo emitter-base breakdown voltage i e =-1ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -1.0 v i cbo collector cut-off current v cb =-50v; i e =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -100 a h fe dc current gain i c =-1a ; v ce =-4v 35 200 f t transition frequency i c =-0.5a ; v ce =-10v 15 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2SA670 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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